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【单选题】

When the intece states are present, the C-V curve of a MOS capacitor will ________

A.
shift to the positive gate voltage direction
B.
shift to the negative gate voltage direction
C.
smear out
D.
remain the same
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参考答案:
举一反三

【多选题】In a MOS with a p-type substrate, two sources of electrons changing the charge density of inversion layer are ________

A.
Diffusion of minority carrier electrons from the substrate across the space charge region
B.
Diffusion of electrons from the metal
C.
Thermal generation of electron-hole pairs within the space charge region
D.
Therma generation of electron-hole pairs within the oxide

【单选题】The depletion-type MOSFET devices are ___________

A.
The creation of the inversion layer charge
B.
The creation of the accumulation layer charge
C.
A channel already exists at threshold gate voltage
D.
A channel already exists at zero gate voltage
相关题目:
【多选题】In a MOS with a p-type substrate, two sources of electrons changing the charge density of inversion layer are ________
A.
Diffusion of minority carrier electrons from the substrate across the space charge region
B.
Diffusion of electrons from the metal
C.
Thermal generation of electron-hole pairs within the space charge region
D.
Therma generation of electron-hole pairs within the oxide
【单选题】The depletion-type MOSFET devices are ___________
A.
The creation of the inversion layer charge
B.
The creation of the accumulation layer charge
C.
A channel already exists at threshold gate voltage
D.
A channel already exists at zero gate voltage
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